| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2814-4 |
SANYO|SANYO |
N/a |
3000 |
 |
|
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SJ302. ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ302Z ,High-speed switching P-ch power MOSFET 60V/16A
2SJ303 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC MAX.
100
UNIT
n
SYMBOL TEST CON ..
