| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2776 |
HITACHI |
N/a |
6000 |
 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V |
2SC2776-A HITACHI
2SC2776VB TR HITACHI
2SC2776 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2778 ,Small-signal deviceFeatures3• Optimum for RF amplification, oscillation, mixing, and IF ofFM/AM radios• Mini type pack ..
2SC2778 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC2778 ,Small-signal deviceTransistors2SC2778Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm+0.100. ..
2SC2780 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SJ244 , Silicon P-Channel MOS FET
2SJ244 , Silicon P-Channel MOS FET
2SJ244 , Silicon P-Channel MOS FET
