| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2736 |
HITACHI |
N/a |
3600 |
 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V |
2SC2736/TC HITACHI
2SC2736T02BTR HITACHI
2SC2736TCTL(TC) HITACHI
2SC2736TR HITACHI
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2SJ207-T1 ,MOS field effect transistorFEATURES
V“ H
O
f, O Directly driven by le having a 3 V power supply.
rt,, 0 Not necessary to ..
2SJ208 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
0 Directly driven by ICs having a 3 V power supply.
. Not necessary to consider drivin ..
2SJ208-T1 ,P-channel MOS FETFEATURES
0 Directly driven by ICs having a 3 V power supply.
. Not necessary to consider drivin ..
