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2SC2715TOSN/a10000avaiTransistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications
2SC2715 TOSHIBA N/a350avaiTransistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications


2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm  High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz)  Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications. 1.1 to 1.4 1. Source 2. Gate 3. Drain MARK :H12 Source(S) (Diode in ..
2SJ187 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°C unitDrain to Source Voltage Vnss - 30 VGate to Source Voltage K ..
2SJ188 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance. Very high-speed switching. Low-voltage driveDrain to Source VoltageGat ..
2SJ188 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CVDSSKassInIm,PDTeh _Tstg
2SJ189 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CDrain to Source VoltageGate to Source VoltageDrain Currept (DC ..
2SJ190 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSS - 60 VGate to Source Voltage ..


2SC2715
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications
2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715

High Frequency Amplifier Applications High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage.
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C) Gpe VCC � 6 V, IE � �1 mA, f � 10.7 MHz
(Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Unit: mm
Weight: 0.012 g (typ.)
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