| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2714-O |
TOSHIBA|TOSHIBA |
N/a |
324400 |
 |
High Frequency Amplifier Applications |
| 2SC2714-O |
TOS|TOSHIBA |
N/a |
4145 |
|
High Frequency Amplifier Applications |
2SC2714-O(QO) TOSHIBA
2SC2714-O(T5L.T) TOSHIBA
2SC2714-O/QO TOSHIBA
2SC2714-Q(QQ) TOSHIBA
2SC2714-QO
2SC2714-QY Changdian
2SC2714-R TOSHIBA, High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-R TOS, High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-R(QR) TOSHIBA
2SC2714S-Y KEJIAXIN
2SC2714Y TOS
2SC2714-Y TOS, High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-Y TOSHIBA, High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-Y TOSHIBA/GUOCHAN, High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-Y , High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-Y TOSHIBA , High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC2714-Y QY Changdian
2SC2714-Y(T5L,F,T) TOSHIBA
2SC2714-Y(TE85L,F) TOSHIBA
2SC2714-Y/Q TOSHIBA
2SC2714YTE85L TOSHIBA
2SC2714-O , High Frequency Amplifier Applications
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A
RDSM = 1 ..
2SJ179 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
q Directly driven by le having a 5 V power supply.
0 Has low on-state resistance
RDS( ..
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications.
1.1 to 1.4
1. Source
2. Gate
3. Drain
MARK :H12
Source(S)
(Diode in ..
