Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2712Y |
TOS|TOSHIBA |
N/a |
6000 |
|
Silicon NPN Transistors |
2SC2712Y |
TOSHIBA|TOSHIBA |
N/a |
2400 |
|
Silicon NPN Transistors |
2SC2712Y , Silicon NPN Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SJ164 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SJ165 ,P-CHANNEL MOS FET FOR SWITCHING-i''ij'i-'?j"""ii' FIELD. EFFECT 'TRANSISTOR
2SJll 65
P-CHANNEL MOS FET
FOR SWITCHING
“Wm ..
2SJ166 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..