| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2712-Y |
TOSHIBA|TOSHIBA |
N/a |
435500 |
 |
NPN Plastic-Encapsulate Transistors |
| 2SC2712-Y |
ROHM |
N/a |
1503 |
|
NPN Plastic-Encapsulate Transistors |
| 2SC2712-Y |
TOSH|TOSHIBA |
N/a |
8891 |
|
NPN Plastic-Encapsulate Transistors |
| 2SC2712-Y |
TOS|TOSHIBA |
N/a |
3000 |
|
NPN Plastic-Encapsulate Transistors |
| 2SC2712-Y |
|
N/a |
2630 |
|
NPN Plastic-Encapsulate Transistors |
| 2SC2712-Y |
TOHIBA |
N/a |
866 |
|
NPN Plastic-Encapsulate Transistors |
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y-- , Silicon NPN Transistors
2SC2713 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I ..
2SC2713-GR , Audio Frequency General Purpose Amplifier Applications
2SC2714 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier ApplicationsApplications Unit: mmFM, RF, MIX,IF Amplifier
2SJ166 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
