2SC2712 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC2712GR , Silicon NPN Transistors
2SC2712GR , Silicon NPN Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SJ130STL-E , Silicon P Channel MOS FET
2SJ132 ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132. ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132.. ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SJ132-Z ,MOS electric field effect power transistorDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ132, 2SJ132-ZP-CHANNEL POWER MOS FETFOR SWIT ..
2SJ133 ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = –4 V) High curr ..
2SC2712
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1162 Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.012 g (typ.)
