2SC2703 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2705 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2707 , isc Silicon NPN Power Transistor
2SC2710 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 100~320 FE (1) Complementary to 2SA1150 Max ..
2SC2712 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC2712GR , Silicon NPN Transistors
2SJ125 , FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
2SJ128 ,MOS electric field effect power transistorDATA SHEET
NEC MOS FIELD EFFECT POWER TRANSISTOR
ZSJ128
FAST SWITCHING
P- CHANNEL SILICON ..
2SJ128-Z ,MOS electric field effect power transistorFEATURES
0 Suitable for switching power supplies, actuater controls, and
23$ 0-2 pulse circuits ..
2SJ130 , Silicon P-Channel MOS FET
2SJ130STL-E , Silicon P Channel MOS FET
2SJ132 ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = −4 V) High curr ..
2SC2703
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC2703
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2703
AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm
5.1 MAX.
0 High DC Current Gain : hFE=100--320 '
0.75MAX.
1.0MAX. -
0.8MAX. 3 if E
MAXIMUM RATINGS (Ta=25°C) S g
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V 1 1.27
1 2 3 .
Collector-Emitter Voltage VCEO 30 V 2.54 E
Emitter-Base Voltage VEBO 5 V m m w l 3
Collector Current IC 1 A S
1. EMITTER
Base Current 1B 0.1 A 2. COLLECTOR
Collector Power Dissipation PC 900 mW 3. BASE
Junction Temperature Tj 150 T JEDEC TO-92MOD
Storage Temperature Range Tstg -5r-150 T JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=O - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 100 nA
Collector-Emitter Breakdown
Voltage V(BR) CEO IC=10mA, IB=0 30 - - V
hFE (1)
V =2V, I =100mA 100 - 320
DC Current Gain (Note) CE C
hFE (2) VCE=2V, Ic=800mA 40 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC=800mA, IB=80mA - - 0.5 V
Base-Emitter Voltage VBE VCE=2V, IC=800mA - 0.9 1.5 V
Transition Frequency fT VCE=2V, Ic=IOOmA - 150 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 13 - pF
(Note) : hFE(1) Classification o : 100--200, Y .' 160--320
1 2001-11-05
TOSHIBA
COLLECTOR CURRENT
VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE
COLLECTOR CURRENT 10 (mA)
.o 9.9
D-l 630!
IC - VCE
COMMON EMITTER
Ta = 25°C
0 1 2 3 4 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
IC/IB = 10
Ta = 100°C
1 3 10 30 100 300
COLLECTOR CURRENT 10 (mA)
SAFE OPERATING AREA
3000 _ l
300 - DC OPERATIO
IC MAX. (PULSED) .y.4
, ' 1min
10 MAX. .w. \
(CONTINUOUS) 10ms).k. YS,"),,
N 100msX
(Ta = 25°C)
X SINGLE NONREPETITIVE N
PULSE Ta=25°C N
CURVES MUST BE DERATED \
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
2SC2703
hFE - IC
COMMON EMITTER
= VCE=2V
300 Ta=100°C
1 3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
IC - VBE
a" 500 COMMON EMITTER
g 300 VCE=2V
o Ta=100°C 25 -25
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
PC - Ta
COLLECTOR POWER DISSIPATION
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SC2703
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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