2SC2625 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGZSC2625 Tttce-FV-vi':"
hlPNsgtttiittyv-ffff, TRIPLE DIFFUSED PLANER TYPE
Em]; 35:14.7;77'm HIGH ..
2SC2626 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGA-35
2SC2626 1tr::epx'''7--F5vt,vAe
hlPN'-x-gt8tftti-frf, TRIPLE DIFFUSED PLANER TYPE
mm. 35 ..
2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2632 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2634 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
2SD999-T1 ,Silicon transistorOPUEHCI
DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
I POWER MINI MOLD
DESCRIPTION
The 2S ..
2SD999-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
2SH14 , Silicon N-Channel IGBT
2SH20 , Silicon N-Channel IGBT
2SJ0536 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain current I V ..
2SJ0536 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SC2625
