| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2621 |
|
N/a |
300 |
 |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
2SC2621#T
2SC2621E SANYO
2SC2625 FUJI ,Applications " 05.8: l.5
1.t1"tt.i'f,tt."Tf, St/itching regulators 545%“ m mm
"HWArteeKt Ultrasonic generators _ lsmg l It,',,,,,
. 'Moa4.v"-f Hig ..
2SC2621 , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
2SC2625 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGZSC2625 Tttce-FV-vi':"
hlPNsgtttiittyv-ffff, TRIPLE DIFFUSED PLANER TYPE
Em]; 35:14.7;77'm HIGH ..
2SC2626 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGA-35
2SC2626 1tr::epx'''7--F5vt,vAe
hlPN'-x-gt8tftti-frf, TRIPLE DIFFUSED PLANER TYPE
mm. 35 ..
2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2632 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD999 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDOPUEHCI
DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
I POWER MINI MOLD
DESCRIPTION
The 2S ..
2SD999-T1 ,Silicon transistorOPUEHCI
DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
I POWER MINI MOLD
DESCRIPTION
The 2S ..
2SD999-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
