| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2603 |
MITSUBIS |
N/a |
10000 |
 |
NPN SILICON TRANSISTOR |
| 2SC2603 |
MIT |
N/a |
2950 |
|
NPN SILICON TRANSISTOR |
2SC2603E MITSUBISHI
2SC2603-E/F/G MITSUBISHI
2SC2603-T812-E MITSUBISHI
2SC2603-T-E MITSUBISHI
2SC2603-T-F MITSUBISHI
2SC2609A NEC
2SC2610 HIT, Silicon NPN Triple Diffused
2SC2610 HITACHI, Silicon NPN Triple Diffused
2SC2610 HITA, Silicon NPN Triple Diffused
2SC2610TZ HITACHI
2SC2611 , Silicon NPN Power Transistors
2SC2611 HIT, Silicon NPN Power Transistors
2SC2611 HITACHI, Silicon NPN Power Transistors
2SC2611#
2SC2613 HIT, Silicon NPN Power Transistors
2SC2613 SMT, Silicon NPN Power Transistors
2SC2603 , NPN SILICON TRANSISTOR
2SC2614 , HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SD965AL-R-AB3-R , LOW VOLTAGE HIGH CURRENT TRANSISTOR
2SD965-Q , Low collector-emitter saturation voltage VCE(sat) low-voltage power supply.
2SD966 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
