2SC2500 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC2500 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2516 , Silicon NPN Power Transistors
2SD882-O , NPN Silicon Plastic-Encapsulate Transistor
2SD882SSL-P-AE3-R , MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SD882-Y , NPN Silicon Plastic-Encapsulate Transistor
2SD882-Y , NPN Silicon Plastic-Encapsulate Transistor
2SD884 ,Si NPN triple diffused planar. Horisontal deflection output.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitT? be p f u aeitril ..
2SD886 ,Si NPN triple diffused planar. High hFE, AF power amplifier.Features 5.0 IO.? 4.0:02o -rtrih'Jii'.ifiAlW4rfsheEiy'rthtrsio'1d-itttevtaae, Re-- i+74'f 7")77 C". ..
2SC2500
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC2500
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2500
STROBE FLASH APPLICATIONS Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS 5.IMAX.
0 High DC Current Gain and Excellent hFE Linearity E
'. hFE (1)= 140--600 (VCE-- IV, 10:0.5A)
'. hFE (2)=70 (Min.), 200 (Typ.) (VCE=1V, IC=2A) 0573222; -
0 Low Saturation Voltage 0.8MAX. 3 g E
: VCE (sat)=0.5v (Max.) (IC=2A, IB=50mA) fr 2 Cc.'.:]';
MAXIMUM RATINGS (Ta=25°C) l .
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3 x.
Collector-Base Voltage VCBO 30 V 2.54 s-?,. X
V 30 ( uh i, air}: d
Collector-Emitter Voltage CES V r ii-,'-.
VCEO 10 1. EMITTER
Emitter-Base Voltage VEBO 6 V 2. COLLECTOR
3. BASE
Collector DC IC 2 A
Current Pulsed (Note 1) ICP 5 JEDEC T0-92M0D
Base Current IE 0.5 A JEITA -
Collector Power Dissipation PC 900 mW TOSHIBA 2-5J1A
Junction Temperature Tj 150 T Weight : 0.36g (Typ.)
Storage Temperature Range Tstg -55--150 °C
(Note 1) : Pulse WidthS10ms, Duty CyeleS 30%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=3OV, IE=O - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, Ic=0 - - 100 nA
Collector-Emi; Breakdown - -
Vol tage VCEO IC - 10mA, IB =0 10 - - V
Emitter-Base Breakdown - -
Vol tage VEBO IE - lmA, IC =0 6 - - V
hFE (1) - -
V - IV, I =0.5A 140 - 600
DC Current Gain (Note 2) CE C
hFE (2) VCE = IV, IC =2A 70 200 -
Collector-Emitter Saturation
Voltage VCE (sat) 1022A, IB=50mA - 0.2 0.5 V
Base-Emitter Voltage VBE VCE=1V, Ic=2A - 0.86 1.5 V
Transition Frequency fT VCEle, IC=0.5A - 150 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f = 1MHz - 27 - pF
(Note 2) : hFE(1) Classification A : 140--240, B : 200--330, C : 300--450, D :
1 2001-11-05
TOSHIBA 2SC2500
IC - VCE IC - VBE
COMMON EMITTER
COMMON EMITTER
_ Ta=25°C "
S s 4 VCE=1V
Sir S?
[:1 M 3
E E Ta=100°Cll25I -25
n: pt 2
J .J 1
0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
hFE - 1C E 0.5 COMMON EMITTER
500 ti A 10 / IB =40
m: 0.3 = o
Ta=100°C Frl Ta 100 Cf
.,t) 300 25 g g
-25 E 8 25
''cii'i tis; 0 1
g 100 , g
5:3 S: 0.05
i? 50 .3
8 COMMON EMITTER 8
VCE=1V 0.05 0.1 0.3 1 3
0.05 0.1 0.3 1 3 COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT Ic (A) SAFE OPERATING AREA
5 -1c MAX.(PULSED) .2(.).k. I 1 I
PC-Ta 3 1 1mm l 10msy:i"
IC MAX. (CONTINUOUS) 100msyd. N
1000 2 N.
o S? 's,
g 800 N DC OPERATION
< F 1 _ o
E z (Ta=25 C)
E '',ii, N i i
:g 600 Q 0.5 N I I
m g' e .yd. SINGLE
t o g 0.3 NONREPETITIVE
'lf 400 g PULSE Ta=25°C \
g j .y.CK. PULSE WIDTHS10ms "N
Si 8 DUTY CYCLES30% N
j 200 0 1 CURVES MUST BE DERATED N.
8 LINEARLY WITH INCREASE
IN TEMPERATURE.
0 0.05
0 20 40 60 80 100 120 140 160 0.3 1 3 10
AMBIENT TEMPERATURE Ta CC) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC2500
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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