2SC2498 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amp ..
2SC2500 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC2500 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SD882-O , NPN Silicon Plastic-Encapsulate Transistor
2SD882SSL-P-AE3-R , MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SD882-Y , NPN Silicon Plastic-Encapsulate Transistor
2SD882-Y , NPN Silicon Plastic-Encapsulate Transistor
2SD884 ,Si NPN triple diffused planar. Horisontal deflection output.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitT? be p f u aeitril ..
2SD886 ,Si NPN triple diffused planar. High hFE, AF power amplifier.Features 5.0 IO.? 4.0:02o -rtrih'Jii'.ifiAlW4rfsheEiy'rthtrsio'1d-itttevtaae, Re-- i+74'f 7")77 C". ..
2SC2498
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application
2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2498 VHF~UHF Band Low Noise Amplifier Application
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.21 g (typ.)
