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2SA1006-2SA1006B-2SC2336-2SC2336A-2SC2336B Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
2SC2336NECN/a40avaiPNP/NPN SILICON EPITAXIAL TRANSISTOR
2SC2336ANECN/a190avaiPNP/NPN SILICON EPITAXIAL TRANSISTOR
2SC2336BNECN/a181avaiPNP/NPN SILICON EPITAXIAL TRANSISTOR
2SA1006NECN/a1346avaiPNP/NPN SILICON EPITAXIAL TRANSISTOR
2SA1006BNECN/a1347avaiPNP/NPN SILICON EPITAXIAL TRANSISTOR


2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C) m E o“ 2SA1006,1006A,1006B/2Sc2336, 2336A,23368 : ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C) SYMBOL CHARACTERISTIC ' Turn-on Time Storage Time ..
2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES The 2SA1009, 2SA1009A are PNP triple diffused transistors de.. signed for switching re ..
2SA101 , Ge PNP Drift
2SA1010 ,SILICON POWER TRANSISTORDATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HI ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)' CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS ..
2SC3617-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oc)' CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS ..
2SC3618 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDoftslllEiiiiiC: DATA SHEET SILICON TRANSISTOR 2SC361 tit NPN SILICON EPITAXIAL TRANSIST ..
2SC3618-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25°C) "''Pulsed: PW g 350 us, Duty Cycle l; 2 % hFE Classifi ..
2SC3618-T2 ,Silicon transistoroftslllEiiiiiC: DATA SHEET SILICON TRANSISTOR 2SC361 tit NPN SILICON EPITAXIAL TRANSIST ..
2SC3619 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS0 High Voltage : VCEQ=3UUV0 Small Collector Output Capacitance : Cob=3.0pF (Typ.)MAXIMU ..


2SA1006-2SA1006B-2SC2336-2SC2336A-2SC2336B

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