| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2330 |
TOS|TOSHIBA |
N/a |
120 |
 |
NPN SILICON EPITAXIAL TRANSISTOR |
2SC2330-O FAIRCHILD
2SC2330-R Fairchild
2SC2330-Y TOSHIBA
2SC2330-Y TOS
2SC2330-Y FSC
2SC2331 NEC,Silicon Power Transistor
2SC2331. SAMSUNG,Silicon Power Transistor
2SC2331-Y Fairchild
2SC2332
2SC2330 , NPN SILICON EPITAXIAL TRANSISTOR
2SC2333 ,PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance)FEATURES 0 High speed switching. _ Sri 18121131“ 4.9 MAX
. O . . . .
0 Low collector saturation v ..
2SC2334 ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2334. ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2335 ,SWITCHING SERIES NPN POWER TRANSISTORS(NPN)DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPE ..
2SD601-Q , Si NPN DIFFUSED JUNCTION MESA
2SD601-S , Si NPN DIFFUSED JUNCTION MESA
2SD602 ,Silicon NPN epitaxial planer typeAbsolute Maximum Ratings (Ta=25˚C)n2Parameter Symbol Ratings UnitCollector to 2SD602 30V VCBObase ..
