| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2240-GR |
TOS|TOSHIBA |
N/a |
95 |
 |
Low Noise Audio Amplifier Applications |
| 2SC2240-GR |
Toshiba|TOSHIBA |
N/a |
6000 |
|
Low Noise Audio Amplifier Applications |
2SC2240-GR(F,T) TOSHIBA
2SC2240-GRTE2FT TOSHIBA
2SC2240-Y-GR-BL TOSHIBA
2SC2250 CHINA
2SC2250#T
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2258 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC2258 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC2267 , SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
2SC2270 ,Silicon NPN Power Transistors TO-126 package-..-_. .uu.._._n‘ ‘u-uu.u_.._.v- .w.SILICON NPN EPITAXIAL TYPE (PCT PROCESS)STROBO FLASH
2SD596 ,AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
..
2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
