| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2238B |
TOSHIBA|TOSHIBA |
N/a |
13 |
 |
SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) |
2SC2238B-Y TOSHIBA
2SC2238B , SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
2SC2240 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applicationsapplications. This device is designed to lower noise figure in the region of low signal source impe ..
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2240-GR , Low Noise Audio Amplifier Applications
2SC2258 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SD592 ,Silicon NPN epitaxial planer type(For low-frequency output amplification)Absolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings Unit2SD592Collector to 30V VCBO+0.2 +0 ..
2SD592A ,SILICON TRANSISTORSAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SD596 ,AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
