2SC1973 ,TRANSISTOR NPN EPITAXIAL PLANARElectrical Characteristics (Ta = 25 'C)"NUnit : mm4.9 i0.2l._.3.01 I Emitter2 : Collector3 ". Base ..
2SC1980 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC1980 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SC2001-K , NPN Silicon Plastic-Encapsulate Transistor
2SC2001-L , NPN Silicon Plastic-Encapsulate Transistor
2SC2001-M , NPN Silicon Plastic-Encapsulate Transistor
2SD2652 , General purpose amplification (12V, 1.5A)
2SD2653 , Low frequency amplifier
2SD2653K , Low frequency amplifier
2SD2655 , TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SD2655 , TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SD2655WM-TL-E , Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
2SC1973
