| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1972 |
MITS |
N/a |
135 |
 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
| 2SC1972 |
MITSUBISHI |
N/a |
69 |
|
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
| 2SC1972 |
三菱 |
N/a |
30 |
|
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
2SC1972#T
2SC1972 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SC1973 ,TRANSISTOR NPN EPITAXIAL PLANARElectrical Characteristics (Ta = 25 'C)"NUnit : mm4.9 i0.2l._.3.01 I Emitter2 : Collector3 ". Base ..
2SC1980 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC1980 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SC2001-K , NPN Silicon Plastic-Encapsulate Transistor
2SD2642 , Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
2SD2643 , Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
2SD2652 , General purpose amplification (12V, 1.5A)
