| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1959Y |
TOS|TOSHIBA |
N/a |
600 |
 |
|
2SC1959-Y , Power Silicon NPN Transistor
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1972 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SC1972 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SD2604 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING, HAMMER DRIVE AND PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS qftAftQ “7+0, TTa.nn0 High DC Current Gain : hFE=2000 (Min.) if o . o :I 'ii0 Low Satu ..
2SD2623 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2624 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
