2SC1927 ,NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USEDATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIE ..
2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037)
1.0 IN at 2 ..
2SC1942 , HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
2SC1944 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SD2576 , Power Transistor (60V, 3A)
2SD2578 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2579 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsFeatures Package Dimensions · High speed.unit:mm · High breakdown voltage (V =1500V).CBO2039D · Hig ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2583 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS• Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 1.0 ..
2SC1927
