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2SC1815LT1

SOT-23 Plastic-Encapsulate Transistors (NPN)

Partnumber Manufacturer Quantity Availability
2SC1815LT1 7414 In Stock

Description and Introduction

SOT-23 Plastic-Encapsulate Transistors (NPN) The 2SC1815LT1 is a general-purpose NPN transistor manufactured by Toshiba. Key specifications include:

- **Type**: NPN Bipolar Junction Transistor (BJT)
- **Package**: SOT-23
- **Collector-Base Voltage (VCBO)**: 60V
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 150mA
- **Power Dissipation (PD)**: 150mW
- **DC Current Gain (hFE)**: 70 to 700 (depending on the variant)
- **Transition Frequency (fT)**: 80MHz
- **Operating Temperature Range**: -55°C to +150°C

It is commonly used in amplification and switching applications.

Partnumber Manufacturer Quantity Availability
2SC1815LT1 CJ/TOSHIBA 7414 In Stock

Description and Introduction

SOT-23 Plastic-Encapsulate Transistors (NPN) The 2SC1815LT1 is a transistor manufactured by CJ/TOSHIBA. It is an NPN silicon epitaxial planar type transistor designed for general-purpose amplification and switching applications. Key specifications include:

- **Collector-Base Voltage (VCBO):** 60V
- **Collector-Emitter Voltage (VCEO):** 50V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 150mA
- **Collector Dissipation (PC):** 400mW
- **Junction Temperature (Tj):** 125°C
- **Transition Frequency (fT):** 80MHz
- **DC Current Gain (hFE):** 70 to 700 (depending on the specific grade)

The transistor is available in a small SOT-23 surface-mount package.

Partnumber Manufacturer Quantity Availability
2SC1815LT1 HF 6000 In Stock

Description and Introduction

SOT-23 Plastic-Encapsulate Transistors (NPN) The 2SC1815LT1 is a general-purpose NPN transistor manufactured by various companies, including HF (likely referring to Hitachi or another manufacturer). Below are the key specifications for the 2SC1815LT1:

- **Type**: NPN Bipolar Junction Transistor (BJT)
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Collector-Base Voltage (VCBO)**: 60V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 150mA
- **Power Dissipation (PD)**: 400mW
- **DC Current Gain (hFE)**: 70 to 700 (depending on operating conditions)
- **Transition Frequency (fT)**: 80MHz
- **Operating Temperature Range**: -55°C to +150°C
- **Package**: SOT-23 (surface-mount package)

These specifications are typical for the 2SC1815LT1 transistor and are consistent across most manufacturers. Always refer to the specific datasheet for precise details.

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