Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC1815-YT2SP.F.T |
TOS|TOSHIBA |
N/a |
3000 |
|
|
2SC1826 , Silicon NPN Power Transistors
2SC1841 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
.
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
2SC1842 ,NPN SILICON TRANSISTORFEATURES . High hFE. hFE '. 600 TYP. (V¢E=6.O V, Ic=1.0 mA) (Oggxfzx)
. Low Noise Voltage. NV : ..
2SC1844 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
NPN SILICON TRANSISTOR
2SC1 844
PACKAGE DIMENSIONS
..
2SC1845 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 0C)
r
SYMBOL
hFE1
hFE2
Fr
Cob
NV
ICBO
Ian
VBE ..
2SD2441 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2441 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca3˚Parameter Symbol Rating UnitCollector-base voltage (Emitter op ..
2SD2444K , IC = 1A. Low saturation voltage. Collector-base voltage VCBO 15 V