Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC1667 |
TOS|TOSHIBA |
N/a |
1000 |
|
Silicon NPN Power Transistors |
2SC1667 |
MATSUSHITA |
N/a |
27 |
|
Silicon NPN Power Transistors |
2SC1667 , Silicon NPN Power Transistors
2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1675 , NPN Plastic Encapsulated Transistor
2SD2228 ,NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIERELECTRICAL CHARACTERISTICS (2T3 = 25 "C)
PARAMETER SYMBOL . . . I TEST CONDITIONS
VCB=16V,IE= ..
2SD2241 ,Silicon NPN Power Transistors TO-220F package2SD2241TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPESWITCHING
2SD2241 ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS Unit in mmHigh DC Current Gain : hFE=2000 (Min.)Low Saturation Voltage : VCE (sat)=1-5 ..