2SC1654-T1B ,Silicon transistorNEC SILICON TRANSISTORS
'ELECTRONDEVICE 2SC'1653,2SC1l6tidll,
DISPLAY TUBE DRIVE,HIGH VOLTAGE S ..
2SC1654-T2B ,Silicon transistorFEATURES
PACKAGE DIMENSIONS o High Voltage l/CEO : 2SC1653 130 v, 2SC1654 160 v
in millimeter ..
2SC1667 , Silicon NPN Power Transistors
2SC1667 , Silicon NPN Power Transistors
2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SD2217 ,NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGDATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SD2222 ,Power DevicePower Transistors2SD2222Silicon NPN triple diffusion planar type darlingtonUnit: mmFor power amplif ..
2SD2226K , MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)
2SD2228 ,NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIERELECTRICAL CHARACTERISTICS (2T3 = 25 "C)
PARAMETER SYMBOL . . . I TEST CONDITIONS
VCB=16V,IE= ..
2SD2241 ,Silicon NPN Power Transistors TO-220F package2SD2241TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPESWITCHING
2SD2241 ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS Unit in mmHigh DC Current Gain : hFE=2000 (Min.)Low Saturation Voltage : VCE (sat)=1-5 ..
2SC1653-T1B-2SC1654-T1B-2SC1654-T2B
