Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC1623-T2B-A |
RENESAS |
N/a |
6000 |
|
|
2SC1623-T2B-A |
|
N/a |
368 |
|
|
2SC1623-T2B-A |
NEC|NEC |
N/a |
11993 |
|
|
2SC1624 ,Silicon NPN Power Transistors TO-220 package-cicTiTEirCkTirsceiimiv0"0ir Si, olulcuo'ri'iesiio unmugg 3 Ih"ith'Iritli,'SlLlCONNPNPLANARTYPE2301 ..
2SC1627A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC1653 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1653-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDNEC SILICON TRANSISTORS
'ELECTRONDEVICE 2SC'1653,2SC1l6tidll,
DISPLAY TUBE DRIVE,HIGH VOLTAGE S ..
2SD2213 , Silicon NPN Epitaxial, Darlington
2SD2213 , Silicon NPN Epitaxial, Darlington
2SD2216 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..