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2SC1622TOSHIBAN/a3000avaiAUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC1622NECN/a198874avaiAUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC1622ANECN/a150350avaiAUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD


2SC1622 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR 2SC1 622A _ia,,,,Eriii?,ti"ii'i'ii'ii' 'iisi7tiii_ " AUDIO /irii:"iiii" ..
2SC1622 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) 'b. CHARACTERISTIC . . . . TEST CONDITIONS - . , VCB=12 ..
2SC1622A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR 2SC1 622A _ia,,,,Eriii?,ti"ii'i'ii'ii' 'iisi7tiii_ " AUDIO /irii:"iiii" ..
2SC1622A-L ,Low-frequency high-gain amplification silicon Tr.SILICON TRANSISTOR 2SC1 622A _ia,,,,Eriii?,ti"ii'i'ii'ii' 'iisi7tiii_ " AUDIO /irii:"iiii" ..
2SC1622A-T1B ,Low-frequency high-gain amplification silicon Tr.ELECTRICAL CHARACTERISTICS (Ta = 25 °C) 'b. CHARACTERISTIC . . . . TEST CONDITIONS - . , VCB=12 ..
2SC1622A-T2B ,Low-frequency high-gain amplification silicon Tr.SILICON TRANSISTOR 2SC1 622A _ia,,,,Eriii?,ti"ii'i'ii'ii' 'iisi7tiii_ " AUDIO /irii:"iiii" ..
2SD2150T100R , Low Frequency Transistor (20V, 3A)
2SD2150T100R , Low Frequency Transistor (20V, 3A)
2SD2150T100S , Low Frequency Transistor (20V, 3A)
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SD2159 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE


2SC1622-2SC1622A

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