| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1162C |
HITACHI |
N/a |
19200 |
 |
|
2SC1173 ,Silicon NPN Power Transistors TO-220 packageApplications.MAXIMUM RATINGSCollector-Base Voltage'SILICON NPN EPITAXIAL TYPE (PCT PROCESS)CHARACTE ..
2SC1175 , Medium Power Amplifiers and Switches
2SC1213 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1213 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1213A , NPN Silicon General Purpose Transistor
2SD1992 ,TransistorTransistors2SD1992, 25D1992A2SD1992,2SDI992ASi‘licon NPN Epitaxial Planar Typé'For> low¥fréquency p ..
2SD1992A ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SD1994 ,TransistorFeatures010w collector-emitter saturation voltage VCEM)°2—3W output can be obtained in a complement ..
