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2SC106B1 N/a 44



2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I, I Easy & economical mounting realizable w ..
2SC1070 ,NPN SILICON TRANSISTORfeatures high power gain, low noise, and excellent forward AGC characteristics in a tiny fourlead ..
2SC108A , SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096 ZSA634/ 2SC1096 PNP/NPN a:e'ftiivrry y :1 y 55732157/ PNP/NPN SILICON EPITAXIA ..
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096 ZSA634/ 2SC1096 PNP/NPN a:e'ftiivrry y :1 y 55732157/ PNP/NPN SILICON EPITAXIA ..
2SD1975 ,Power DeviceAbsolute Maximum Ratings T = 25°CC 5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volt ..
2SD1979 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1979 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1: BaseParameter Symbol Rating Unit2: EmitterCollector-base volt ..
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