IC Phoenix
 
Home ›  2212 > 2SC1009A-T1B-2SC1009A-T2B,Silicon transistor
2SC1009A-T1B-2SC1009A-T2B Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SC1009A-T1B |2SC1009AT1BNECN/a6000avaiSilicon transistor
2SC1009A-T2B |2SC1009AT2BNECN/a11700avaiSilicon transistor
2SC1009A-T2B |2SC1009AT2BN/AN/a3000avaiSilicon transistor


2SC1009A-T2B ,Silicon transistorFEATURES 0 High Gain Bandwidth Product: Fr = 250 MHz TYP. 0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorSILICON TRANSISTOR 3 NEC _ ' . 2SC1 OOBA ELECTRON “DEVICE l (Sy, 243° y ' "r ivi)rk' ..
2SC1047 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I, I Easy & economical mounting realizable w ..
2SC1070 ,NPN SILICON TRANSISTORfeatures high power gain, low noise, and excellent forward AGC characteristics in a tiny fourlead ..
2SC108A , SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C) CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _ q High DC Current Gain and good hFE' linearity. hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
2SD1953 ,NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
2SD1957 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.
2SD1975 ,Power DeviceAbsolute Maximum Ratings T = 25°CC 5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volt ..


2SC1009A-T1B-2SC1009A-T2B

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED