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2SC1009FAIRCHILDN/a960avaiFM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC1009NECN/a3000avaiFM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC1009ANECN/a936800avaiFM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD


2SC1009A ,FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES 0 High Gain Bandwidth Product: Fr = 250 MHz TYP. 0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T1B ,Silicon transistorFEATURES 0 High Gain Bandwidth Product: Fr = 250 MHz TYP. 0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorFEATURES 0 High Gain Bandwidth Product: Fr = 250 MHz TYP. 0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorSILICON TRANSISTOR 3 NEC _ ' . 2SC1 OOBA ELECTRON “DEVICE l (Sy, 243° y ' "r ivi)rk' ..
2SC1047 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I, I Easy & economical mounting realizable w ..
2SD1947A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING AND LAMP, SOLENOID DRIVE APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=500--1500 (Ic=1A)_m'OtO ollmli::l+lLn ..
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C) CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _ q High DC Current Gain and good hFE' linearity. hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
2SD1953 ,NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
2SD1957 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.


2SC1009-2SC1009A

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