| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1008-Y |
|
N/a |
251 |
 |
NPN Silicon Epitaxial Transistor |
| 2SC1008-Y |
FSC|Fairchild Semiconductor |
N/a |
3507 |
|
NPN Silicon Epitaxial Transistor |
| 2SC1008-Y |
FAIRCHILD|Fairchild Semiconductor |
N/a |
10000 |
|
NPN Silicon Epitaxial Transistor |
2SC1008-Y , NPN Silicon Epitaxial Transistor
2SC1009 ,FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009 ,FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR
3 NEC _ ' .
2SC1 OOBA
ELECTRON “DEVICE l
(Sy,
243° y
'
"r ivi)rk' ..
2SC1009A ,FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T1B ,Silicon transistorFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SD1941 , Silicon NPN Power Transistors
2SD1947A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING AND LAMP, SOLENOID DRIVE APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=500--1500 (Ic=1A)_m'OtO ollmli::l+lLn ..
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C)
CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
