2SB976 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB976 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15 +0.15Parameter Symbol Rating Unit0.45 0.45–0.1 –0.1+0.6 +0 ..
2SB985 ,PNP Epitaxial Planar Silicon Transistors Large-Current Driving ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB986 ,PNP Epitaxial Planar Silicon Darlington Transistors 50V/4A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC1008-O , NPN Silicon Epitaxial Transistor
2SC1008-Y , NPN Silicon Epitaxial Transistor
2SD1918 , High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
2SD1919 , Medium Power Transistor (32V, 2A)
2SD1930 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD1933 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1937 ,For low-frequency amplificationElectrical Characteristics (Ta=25˚C)
2SB976
