2SB970 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB974 , isc Silicon PNP Darlington Power Transistor
2SB974. , isc Silicon PNP Darlington Power Transistor
2SB975 , isc Silicon PNP Darlington Power Transistor
2SB976 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB976 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15 +0.15Parameter Symbol Rating Unit0.45 0.45–0.1 –0.1+0.6 +0 ..
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SD1913 ,60V/3A Low-Frequency Power Amplifier ApplicationsFeatures3.2• Wide ASO (Adoption of MBIT process).•Low saturation voltage.• High reliability.• High ..
2SD1915 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SD1918 , High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
2SD1919 , Medium Power Transistor (32V, 2A)
2SB970
