| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB966 |
NEC|NEC |
N/a |
99 |
 |
PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor |
2SB966 , PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor
2SB967 ,Silicon PNP epitaxial planar type(For low-frequency power amplification)Absolute Maximum Ratings (Ta=25˚C)nUnit: mm6.5– 0.2Parameter Symbol Ratings Unit5.354.35Collector ..
2SB968 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca(3.0)Parameter Symbol Rating Unit123Collector-base voltage (Emit ..
2SB968 ,Power DeviceFeatures• Possible to solder radiation fin directly to printed circuit board• High collector-emitte ..
2SB970 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1905 ,NPN Epitaxial Planar Type Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
