| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB798 |
NEC|NEC |
N/a |
10000 |
 |
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA) |
| 2SB798 |
NEC/SK|NEC |
N/a |
100000 |
|
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA) |
2SB798/DK NEC
2SB798/DL NEC
2SB798-T1 NEC
2SB798-T1
2SB798-T1(DK) NEC
2SB798-T1(DL) NEC
2SB798-T1(DM) NEC
2SB798-T1-A NEC
2SB798-T1-AZ NEC
2SB798-T1B NEC
2SB798-T2 NEC
2SB799 SKNEC, Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
2SB799 ROHM, Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
2SB799 NEC, Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
2SB799(M)-T1B(ML) NEC
2SB799-D-T1 NEC
2SB799-D-T1-AZ NEC
2SB799-D-T2 NEC
2SB799-D-T2-AZ RENESAS
2SB799-D-T2-AZ NEC
2SB799-T1 NEC
2SB799-T1(MK) NEC
2SB799-T1/T2 NEC
2SB799-T1-AZ/MK RENESAS
2SB799-T1B(MK) NEC
2SB798 , Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)
2SB799-T2 ,Silicon transistorFEATURES
0 World Standard Miniature Package
: SOT--89
0 Low Colleétor Saturation Noltage
I VCE( ..
2SB800 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. ' _ UNIT _ I TEST CON ..
2SB800-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. ' _ UNIT _ I TEST CON ..
2SB800-T1 ,Silicon transistorDATASHEET
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_ _ l . ZSBBOO
PNP SILICON EPITAXIAL TRANSISTO ..
2SD1802 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsOrdering number:EN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Swit ..
2SD1802T-TL-E , Bipolar Transistor
2SD1802T-TL-E , Bipolar Transistor
