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2SB772S UTC N/a 2000 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR



2SB772SL UTC
2SB772SL-D GC
2SB772SL-E GC
2SB772SL-P-AA3-R UTC
2SB772SL-P-AB3-R UTC
2SB772SL-Q-AB3-R UTC
2SB772-T1-A NEC
2SB772-T1B NEC
2SB772Y CJ
2SB772-Y KEC, PNP Silicon Plastic-Encapsulate Transistor
2SB772-Y SEC, PNP Silicon Plastic-Encapsulate Transistor
2SB772-Y FSC, PNP Silicon Plastic-Encapsulate Transistor
2SB772-Y FAIRCHILD, PNP Silicon Plastic-Encapsulate Transistor
2SB772-Y… FSC
2SB772S , TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SB774 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SB774 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB775 ,PNP Epitaxial Planar Silicon Transistor 85V/6A, AF 35W Output Applications
2SB776 ,PNP Epitaxial Planar Silicon Transistor 100V/7A, AF 40W Output Applications
2SD1780 ,NPN SILICON TRANSISTORFEATURES 0 Built in 60 v Zener Diode at B-C. - . A. . High DC Current Gain. 6? LEE hFE = 800 to 3 ..
2SD1780 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 0C) SYMBOL CHARACTERISTJC . . MAX. UNIT TEST CONDITIONS Col ..
2SD1781 , NPN Silicon Plastic Encapsulated Transistor
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