Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB56-PAIR |
TOSHIBA.|TOSHIBA |
N/a |
115 |
|
|
2SB598 ,FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS
2SB601 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB601. ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB605 ,PNP SILICON TRANSISTORFEATURES . High Total Power Dissipation and High Breakdown Voltage: (37293331 (0103,)
1.0 w at 25 ..
2SB605 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta TT. 25 ''C)
CHARACTERISTIC, . MAX. TEST CONDITIONS
DC Current Ga ..
2SD1620 ,NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe ApplicationsFeatures Package Dimensions · Less power dissipation because of low V ,CE(sat) unit:mmpermitting mo ..
2SD1622 ,Low-Frequency Power Amp ApplicationsAbsolute Maximum Ratings at Ta=25°C T unitCollector to Base Voltage VCBO (-)60 VCollector to Emitte ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures4.51.5•1.6Adoption of FBET, MBIT processes.•Low collector-to-emitter saturation voltage.•La ..