| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1710TL |
ROHM |
N/a |
14500 |
 |
General purpose amplification (−30V, −1A) |
2SB1710-X ROHM
2SB1721(0)-2-E1 NEC
2SB1721(0)-Z-E1 NEC
2SB1721(0)-Z-E1-AZ RENESAS
2SB1721(O)-Z-E1 NEC
2SB1721-Z-E1 NEC
2SB1722 PANASONI
2SB1722GOL Panasonic
2SB1722GOL PANASONIC
2SB1710TL , General purpose amplification (−30V, −1A)
2SB1722J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1733 , General purpose amplification (−30V, −1A)
2SB507 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB544 ,Low-Frequency Power Amp / Electronic Governor Applications
2SD1535 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit*Collector-e ..
2SD1539 ,Silicon NPN epitaxial planar type(For low-voltage switching)Absolute Maximum Ratings (T =25˚C)n C1.3– 0.21.4– 0.1Parameter Symbol Ratings Unit– +0.20.5 –0.1Co ..
2SD1541 ,SI NPN TRIPLE DIFFUSED JUNCTION MESA
