| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1710-X |
ROHM |
N/a |
2853 |
 |
|
2SB1722J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1733 , General purpose amplification (−30V, −1A)
2SB507 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB544 ,Low-Frequency Power Amp / Electronic Governor Applications
2SB546 , Silicon PNP Power Transistors
2SD1539 ,Silicon NPN epitaxial planar type(For low-voltage switching)Absolute Maximum Ratings (T =25˚C)n C1.3– 0.21.4– 0.1Parameter Symbol Ratings Unit– +0.20.5 –0.1Co ..
2SD1541 ,SI NPN TRIPLE DIFFUSED JUNCTION MESA
2SD1541# ,SI NPN TRIPLE DIFFUSED JUNCTION MESA
