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2SB1440UTGN/a1000avaiSmall-signal device
2SB1440长电N/a725avaiSmall-signal device
2SB1440DIODESN/a900avaiSmall-signal device


2SB1440 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustione ..
2SB1440 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca45˚3.0±0.15Parameter Symbol Rating UnitCollector-base voltage (E ..
2SB1443 , Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
2SB1446 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1446 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SD1313 ,POWER TRANSISTORS(25A,350V,200W)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD1314 ,Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Motor Control ApplicationsApplications  High DC current gain: h = 100 (min) (V = 5 V, I = 15 A) FE CE C Low saturatio ..
2SD1315 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 "C)l 1 Base'2 I Collector3 I EmitterFull Pack PackageAtMtt2M/'Con ..
2SD1319 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 'C) .Condition .abeffUtlgiRtitr, 1%=25V, 13:0cr.:ivfuat)Ntih', Ia ..
2SD1321 ,SI NPN TRIPLE DIFFUSED PLANAR DARLINGTONElectrical Characteristics (Ta =25 "C)Item Symbol Condition min, typ. max, Unit27 br 7 , Utntfitltr ..
2SD1326 ,Silicon NPN triple diffusion planar type Darlington For midium speed power switchingAbsolute Maximum Ratings (T =25˚C)n C2.54– 0.25Parameter Symbol Ratings Unit5.08– 0.5Collector to ..


2SB1440

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