Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1440(U)-R(TX) |
PANA|Panasonic |
N/a |
1000 |
|
|
2SB1443 , Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
2SB1446 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1446 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SB1449 ,PNP Epitaxial Planar Silicon Transistors 50V/5A Switching ApplicationsFeatures Package Dimensions · Surface mount type device making the followingunit:mmpossible.2069B-R ..
2SB1450 ,High Current Switching TransistorFeatures• Surface mount type device making the following possible.- Reduction in the number of manu ..
2SD1319 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 'C) .Condition .abeffUtlgiRtitr, 1%=25V, 13:0cr.:ivfuat)Ntih', Ia ..
2SD1321 ,SI NPN TRIPLE DIFFUSED PLANAR DARLINGTONElectrical Characteristics (Ta =25 "C)Item Symbol Condition min, typ. max, Unit27 br 7 , Utntfitltr ..
2SD1326 ,Silicon NPN triple diffusion planar type Darlington For midium speed power switchingAbsolute Maximum Ratings (T =25˚C)n C2.54– 0.25Parameter Symbol Ratings Unit5.08– 0.5Collector to ..