Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1438-R |
PANASONIC|Panasonic |
N/a |
10200 |
|
|
2SB1440 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustione ..
2SB1440 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca45˚3.0±0.15Parameter Symbol Rating UnitCollector-base voltage (E ..
2SB1443 , Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
2SB1446 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1312 ,NPN SILICON TRANSISTORFEATURES . 0 High total power dissipation and high breakdown voltage: (0293113.)
1.0 W at 25 °C am ..
2SD1313 ,POWER TRANSISTORS(25A,350V,200W)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD1314 ,Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Motor Control ApplicationsApplications High DC current gain: h = 100 (min) (V = 5 V, I = 15 A) FE CE C Low saturatio ..