| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1430-L |
NEC|NEC |
N/a |
400 |
 |
|
2SB1432 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1434 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1435 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustione ..
2SD1308 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE
2SD1312 ,NPN SILICON TRANSISTORFEATURES . 0 High total power dissipation and high breakdown voltage: (0293113.)
1.0 W at 25 °C am ..
2SD1313 ,POWER TRANSISTORS(25A,350V,200W)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
