Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1427 T100E |
ROHM |
N/a |
239 |
|
Power transistor (−20V, −2A) |
2SB1427 T101 U ROHM
2SB1427 T00E ROHM
2SB1427 T100E , Power transistor (−20V, −2A)
2SB1427 T100E , Power transistor (−20V, −2A)
2SB1427T100E , Power transistor (−20V, −2A)
2SB1427T100E , Power transistor (−20V, −2A)
2SB1429 ,Silicon PNP Power Transistors TO-3PL packageAbsolute Maximum Ratings (Ta = 25°C) 3CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO ..
2SD1302 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1304 ,Si NPN epitaxial planar. AF amplifier.PANASONIC 1:Nir"/i'Ciiirisoz:r ?EC I) IVEEIBEVEISLI DUDEIEZLI: 5-___- ,__.__‘.~._.___....M_ " _ 5.. ..
2SD1305 ,Si NPN epitaxial planar high voltage AF amplifier.Electrical Characteristics (Ta TCC 25 "C)0.4 i0.2T-ter-is'2588140-0.1l : Emitter2 : Base3 I Collect ..