Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1424 T100R |
ROHM |
N/a |
10000 |
|
Low VCE(sat) Transistor (−20V, −3A) |
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SB1424T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SB1424T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SD1277 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1277 V I ..
2SD1286 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3applications] l. Base . _
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 4. Col ..
2SD1286 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3FEATURES
q High hFE : hFE =T. 2 000 to 30 000
0 Complement to 2SB963-Z
QUALITY GRADE
Standa ..