| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1407 |
HITACHI |
N/a |
3000 |
 |
Silicon PNP Epitaxial |
2SB1407CSTR HITACHI
2SB1409 HIT, Silicon PNP Epitaxial
2SB1409C90STL-E RENESAS
2SB1409CSTL HITACHI
2SB1412 , Low VCE(sat). PNP silicon transistor. Collector-base voltage VCBO -30 V
2SB1412 ROAM, Low VCE(sat). PNP silicon transistor. Collector-base voltage VCBO -30 V
2SB1412 ROHM, Low VCE(sat). PNP silicon transistor. Collector-base voltage VCBO -30 V
2SB1412 R RHOM
2SB1412 TL Q ROHM
2SB1412 TL P ROHM
2SB1412 TL Q ROHM
2SB1412 TL R ROHM, Low frequency transistor (−20V,−5A)
2SB1412 TLP ROHM
2SB1412F5
2SB1412-F-TL-Q ROHM
2SB1412L UTC
2SB1412-Q ROHM
2SB1412QF5 ROHM
2SB1412-R 蓝箭
2SB1412R-U ROHM
2SB1412TL R ROHOM, Low frequency transistor (−20V,−5A)
2SB1412TLQ ROHM
2SB1412TLQ
2SB1412-TL-Q ROHM
2SB1412TLR ROHM, Low frequency transistor (−20V,−5A)
2SB1412TLR Pb-free, Low frequency transistor (−20V,−5A)
2SB1412-TL-R ROHM, Low frequency transistor (−20V,−5A)
2SB1407 , Silicon PNP Epitaxial
2SB1413 ,TransistorAbsolute Maximum Ratings (Ta=25°C)2531413I Package Dimensions75:02 'F—iUnit 2 mm45:0210.810205$90'. ..
2SB1414 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1416 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SD1267 ,Power Deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SD1267 ,Power DeviceElectrical Characteristics T = 25°CCParameter Symbol Conditions Min Typ Max Unit2SD1267 I V = 60 V ..
2SD1268 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
