| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1386 T100Q |
ROHM |
N/a |
875 |
 |
Low frequency transistor (−20V,−5A) |
2SB1386 T100Q(BH/QD) ROHM
2SB1386 T100R ROHM, Low frequency transistor (−20V,−5A)
2SB1386 T100R- ROHM, Low frequency transistor (−20V,−5A)
2SB1386 T100R(BH/RX) ROHM
2SB1386 T101S(BH/S21) ROHM
2SB1386 T113P(BA/RY) ROHM
2SB1386(BH) ROHM
2SB1386FT100Q ROHM
2SB1386L UTC
2SB1386L
2SB1386L-R UTC
2SB1386L-R-AB3-R UTC
2SB1386-Q(BH/QL) KEXIN
2SB1386-Q(BH/QM) KEXIN
2SB1386-Q(BH/QX) KESENES
2SB1386-R ROHM, PNP Silicon Epitaxial Transistors
2SB1386-R SECOS, PNP Silicon Epitaxial Transistors
2SB1386-R(BH/RL) KESENES
2SB1386-R(BH/RN) KEXIN
2SB1386-R(BH/RX) KESENES
2SB1386-R-50(BH/RM) KEXIN
2SB1386 T100Q , Low frequency transistor (−20V,−5A)
2SB1386T100Q , Low frequency transistor (−20V,−5A)
2SB1389 , Silicon PNP Power Transistors
2SB1390 , Silicon PNP Power Transistors
2SB1392 , isc Silicon PNP Power Transistor
2SD1250 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitV I = 500 µA ..
2SD1250 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit(6.5)Collector-base voltage (Emitter ..
2SD1251 ,Silicon NPN triple diffusion junction type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C2.54– 0.35.08– 0.5Parameter Symbol Ratings Unit 1:Base13 22:C ..
