Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1369-Y |
KEC |
N/a |
3000 |
|
|
2SB1371 ,Power DeviceFeaturesφ 3.2±0.1• Excellent collector current I characteristics of forward currentCtransfer ratio ..
2SB1374 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1375 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SB1375. ,Silicon PNP Power Transistors TO-220F package2531375AUDIO FREQUENCY POWER AMPLIFIER Unit in mm10+03 ¢32+02 2.710%O T.nw Qatnrntinn antnc‘n . Vnm ..
2SB1381 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=1500(Min.)(VCE = -3V, IC = -2.5A)0 Lo ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD1222 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switch ..
2SD1223 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..